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| PD - 9.1505B IRF7316 l l l l l Generation V Technology Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Fully Avalanche Rated HEXFET(R) Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -30V RDS(on) = 0.058 6 5 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Description Top View SO-8 Absolute Maximum Ratings ( TA = 25C Unless Otherwise Noted) Symbol VDS VGS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TA = 25C TA = 70C Maximum Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25C Maximum Power Dissipation TA = 70C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range -30 20 -4.9 -3.9 -30 -2.5 2.0 1.3 140 -2.8 0.20 -5.0 -55 to + 150 A W mJ A mJ V/ ns C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient Symbol RJA Limit 62.5 Units C/W 8/12/04 IRF7316 Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -30 -1.0 Typ. 0.022 0.042 0.076 7.7 23 3.8 5.9 13 13 34 32 710 380 180 Max. Units Conditions V VGS = 0V, ID = -250A V/C Reference to 25C, ID = -1mA 0.058 VGS = -10V, ID = -4.9A 0.098 VGS = -4.5V, ID = -3.6A V VDS = VGS, ID = -250A S VDS = -15V, ID = -4.9A -1.0 VDS = -24V, VGS = 0V A -25 VDS = -24V, VGS = 0V, TJ = 55C 100 VGS = -20V nA -100 VGS = 20V 34 ID = -4.9A 5.7 nC VDS = -15V 8.9 VGS = -10V, See Fig. 10 19 VDD = -15V 20 ID = -1.0A ns 51 RG = 6.0 48 RD = 15 VGS = 0V pF VDS = -25V = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS ISM V SD t rr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units -2.5 A -30 V ns nC -0.78 -1.0 44 66 42 63 Conditions D MOSFET symbol showing the integral reverse G p-n junction diode. S TJ = 25C, IS = -1.7A, VGS = 0V TJ = 25C, IF = -1.7A di/dt = 100A/s Notes: Repetitive rating; pulse width limited by Starting TJ = 25C, L = 35mH RG = 25, IAS = -2.8A. max. junction temperature. ( See fig. 11 ) ISD -2.8A, di/dt 150A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 10sec. IRF7316 100 VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP 100 -I D , Drain-to-Source Current (A) 10 -I D , Drain-to-Source Current (A) VGS - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V TOP 10 -3.0V 20s PULSE WIDTH TJ = 25C A 0.1 1 10 -3.0V 1 1 0.1 1 20s PULSE WIDTH TJ = 150C A 10 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 -ID , Drain-to-Source Current (A) TJ = 25C TJ = 150C 10 -ISD , Reverse Drain Current (A) TJ = 150C 10 TJ = 25C 1 3.0 3.5 4.0 4.5 V DS = -10V 20s PULSE WIDTH 5.0 5.5 6.0 A 1 0.4 0.6 0.8 1.0 VGS = 0V 1.2 A 1.4 -VGS , Gate-to-Source Voltage (V) -VSD , Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage IRF7316 RDS(on) , Drain-to-Source On Resistance (Normalized) -4.9A ID =-4.9A RDS (on) , Drain-to-Source On Resistance () 2.0 0.6 0.5 1.5 0.4 1.0 0.3 0.2 V GS = -4.5V 0.5 0.1 VGS = -10V A 0.0 -60 -40 -20 -10V VGS =-10V 0 20 40 60 80 100 120 140 160 0.0 0 10 20 30 TJ , Junction Temperature( C) -ID , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current RDS (on) , Drain-to-Source On Resistance () 0.16 300 EAS , Single Pulse Avalanche Energy (mJ) 250 ID -1.3A -2.2A BOTTOM -2.8A TOP 0.12 200 0.08 I D = -4.9A 150 100 0.04 50 0.00 0 -VGS , Gate -to-Source Voltage (V) 3 6 9 12 15 A 0 25 Starting TJ , Junction Temperature ( C) 50 75 100 125 150 Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current IRF7316 1400 VGS = 0V f = 1 MHz Ciss = Cgs + Cgd + Cds Crss = Cgd Coss = Cds + Cgd 20 SHORTED ID = -4.9A VDS =-15V 1200 -VGS , Gate-to-Source Voltage (V) A 16 C, Capacitance (pF) 1000 Ciss Coss 800 12 600 8 400 Crss 4 200 0 1 10 100 0 0 10 20 30 40 - V DS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) 0.50 0.20 10 0.10 0.05 0.02 1 0.01 PDM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient IRF7316 SO-8 Package Details D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 6 E 8 7 6 5 H 0.25 [.010] A c D E e e1 H 1 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e K L y e1 A K x 45 C 0.10 [.004] y 8X c 8X b 0.25 [.010] A1 CAB 8X L 7 NOT ES : 1. DIMENSIONING & TOLERANCING PER AS ME Y14.5M-1994. 2. CONTROLLING DIMENS ION: MILLIMET ER 3. DIMENSIONS ARE SHOWN IN MILLIMET ERS [INCHES ]. 4. OUTLINE CONFORMS TO JEDEC OUT LINE MS -012AA. 5 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENSION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050] 6.46 [.255] FOOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 Part Marking EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPTIONAL) Y = LAS T DIGIT OF THE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX F7101 IRF7316 SO-8 Tape & Reel Information Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice. 8/04 |
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